反应烧结法制备Mg4NbO9微波介质陶瓷毕业论文
2022-06-28 23:39:54
论文总字数:20076字
摘 要
随着微波通信向高频波段的发展,迫切需要开发低介电常数,高品质因数的微波介质陶瓷。刚玉型结构的α-Al2O3瓷具有很高的Qf值(300000GHz),但氧化铝陶瓷的烧结温度很高(在1600~1800℃之间),限制了它作为低温烧结材料的发展。因此研制开发新一代高Q、低εr的微波基板材已成为微波介质陶瓷领域的热点问题。Mg4Nb2O9晶体具有与α-Al2O3具有相同的刚玉型晶体结构。因此Mg4Nb2O9可望成为取代氧化铝陶瓷的新一代高Q值基板材料。
本论文从微波介质陶瓷的分类、发展历史、研究现状、制备技术以及介电性能的测试和表征等方面对微波介质陶瓷材料进行了综述。在此基础上,通过对比反应烧结法和传统固相法所得的陶瓷性能,得出最佳制备方法以及最佳烧结温度。
通过研究发现,当烧结温度在1350℃时,两种方法制备的陶瓷性能几乎没有差别,而反应法与传统法相比省略了预烧环节,降低了成本。因此,采用反应烧结法制备Mg4NbO9微波介质陶瓷是可行的,最佳烧结温度为1350℃,此时εr=13.2,Qf=172000GHz,τf= -58.67ppm/℃。
关键词:Mg4Nb2O9微波介质陶瓷 反应烧结法 介电性能
Mg4Nb2O9 ceramics prepared by reaction sintering process
Abstract
With the rapid development of microwave communication to the high frequency band, ceramics with low dielectric constant and high quality value need to be developed. Corundum type structure of the α-Al2O3 ceramic has high Qf value(300000GHz),but the sintering temperature of Al2O3 is high(between 1600 ~ 1800 ℃), which limits the development of low-temperature sintered material.Therefore,developing a new generation with high quality value , low dielectric constant has become a hot issue in the field of microwave dielectric ceramics.Mg4Nb2O9 crystal has the similar corundum type crystal structure to Al2O3.Therefore, Mg4Nb2O9 is expected to become a new generation of high Q value of substrate material instead of Al2O3 ceramics.
In this paper, many aspects such as developing history、the classification、current research situation、application、properties of the microwave dielectric ceramics were summarized systemically. On this basis, through the ceramic performance results from comparison of reaction sintering method and the traditional method to acquire the best preparation method and sintering temperature.
Through the research, we found that ,when the sintering temperature is 1350℃, the properties of ceramics prepared by two methods were almost no difference, but the reaction method omits pre-sintering,which reduces cost. Therefore, by reaction sintering of Mg4NbO9 microwave dielectric ceramics is feasible, the optimum sintering temperature is 1350℃, εr=13.2, Qf=172000GHz,τf= -58.67ppm/℃。
Keywords:Mg4Nb2O9 ceramics;reaction-sintering process;microwave dielectric properties
目 录
摘 要 I
Abstract II
第一章 绪论 1
1.1引言 1
1.2 微波介电陶瓷的研究概述 1
1.2.1微波介质陶瓷的发展历史 1
1.2.2微波介质陶瓷研究存在的问题 2
1.2.3微波介质陶瓷的发展趋势 2
1.2.3.1探索介电性能更优的材料体系 2
1.2.3.2降低烧结温度 2
1.2.4按微波介质材料介电常数分类 2
1.2.4.1低介微波介电陶瓷体系 2
1.2.4.2 中介微波介电陶瓷体系 3
1.2.4.3 高介微波介电陶瓷体系 3
1.3微波介质陶瓷的性能参数及参数要求 3
1.3.1微波介质陶瓷的参数 3
1.3.1.2 品质因数Q 4
1.3.1.3 谐振频率温度系数 5
1.4 微波介质陶瓷的应用 5
1.5 Mg4Nb2O9简介 6
1.6课题的提出和研究内容 7
第二章 实验部分 8
2.1 样品制备 8
2.1.1实验原材料 8
2.1.2 实验仪器 8
2.1.3实验工艺 9
2.1.3.1 升温阶段 11
2.1.3.2 保温阶段 12
2.1.3.3 降温阶段 12
2.2 样品性能表征 12
2.2.1 烧结性能的表征 12
2.2.2 介电性能的表征 12
2.2.3 微结构的表征 14
2.2.3.1 X射线衍射分析(XRD) 14
2.2.3.2 扫描电子显微镜(SEM) 14
第三章 实验结果与讨论 15
3.1 纯Mg4Nb2O9微波介质陶瓷的制备 15
3.1.1 试样制备与测试 15
3.1.2 性能测试 15
3.1.3 结果分析 15
3.1.3.1 体积密度分析 15
3.1.3.2介电性能分析 16
3.1.3.3XRD分析 18
3.1.3.4 SEM分析 21
第四章 结论 24
参考文献 25
致 谢 27
第一章 绪论
1.1引言
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