论文总字数：18239字

摘 要

为了研究高Q系微波介质材料的性能，本论文选取了(Zr_0.8，Sn_0.2)TiO₄(ZST)作为研究对象，对添加剂含量，添加剂种类以及工艺过程对(Zr_0.8，Sn_0.2)TiO₄性能的影响作了研究。本文探讨了各类助剂对ZST陶瓷的微波结构和电介性能的影响，其中包括两种复合添加剂：La₂O₃/MgO和ZnO/ZrO，还讨论了这两种复合添加剂的添加量对ZST性能的影响。然后探讨了工艺过程对ZST性能的影响，其中包括预烧温度，压片压力的改变对其性能的影响。探讨的结论如下：复合添加La₂O₃/MgO时，ZST性能最好。但是因为La³ 半径较大，它进入晶格时导致ZST晶格结构变疏松，使得离子运动更加容易；加入MgO后出现较多的液相，较大地帮助了离子的快速迁移。所以加入La₂O₃/MgO很好地推动了ZST陶瓷的生长。但如果持续增加La₂O₃/MgO加入量，晶粒就会长得很快，晶界也会移动很快，这引起的晶格缺陷和残留的气孔就会变多了，从而致使材料的密度和Q×f值降低。在1340℃时保温5 h，加入La₂O₃在0.5 wt%，MgO在1 wt%时(Zr_0.8，Sn_0.2)TiO₄介电性能最好。 .

关键词：(Zr_0.8，Sn_0.2)TiO₄ 介电性能 添加剂

Study on the properties of microwave dielectric materials with high Q system

Abstract

In order to study the properties of high Q microwave dielectric materials,this paper selected (Zr_0.8, Sn_0.2) TiO₄ (ZST) as the research object, the structure, dielectric properties, and additive content of (Zr, Sn) TiO₄, additive species and the influence of the process on the system. The effects of various additives on the structure and dielectric properties of ZST ceramics were discussed,which includes two kinds of compound additives: La₂O₃/MgO and ZnO/ZrO. The effects of the addition of these two kinds of compound additives on the properties of ZST were also discussed. The effects of the addition of these two kinds of compound additives on the properties of ZST were also discussed,which includes the effect of the pre burning temperature, the pressure of the compression and the change of the pressure on its performance. The conclusions of the study are as follows: when La₂O₃/MgO is added with ZST, the performance of is best. But because of the larger radius of La³ , when it enters the crystal lattice, the ZST crystal lattice structure becomes loose, which makes the ion movement more easily. After entering MgO, more liquid phase appeared, which helped the rapid migration of ions. So joining La₂O₃/MgO is a good way to promote the growth of ZST ceramics. If you continue to increase the amount of La₂O₃/MgO added, it will make the grain grow too fast. grain boundary movement rate is too large, which leads to lattice defects and residual pores become much more, thus the density of the material and the decrease of Q ×f value. At 1340℃, 5 h, La₂O₃0.5 wt%,, MgO0.5 wt%, (Zr_0.8, Sn_0.2) TiO₄ dielectric properties of the best.

Key Words: (Zr_0.8, Sn_0.2) TiO₄；Dielectric properties；Additives

.目 录

摘 要 I

Abstract II

第一章 绪论 1

1.1 微波介质陶瓷的研究与发展 1

1.2 微波介质陶瓷的性能要求 1

1.3 (Zr，Sn)TiO₄微波介质材料的研究进展 2

1.4 微波介质陶瓷材料的应用 2

1.4.1 在微波瓷介电容器方面的应用 2

1.4.2 在微波介质谐振器上的应用 2

1.4.3在介质滤波器中的应用 3

1.4.4 在微波介质基板中的应用 3

1.5 低温烧结微波介质陶瓷 4

1.5.1 怎样实现低温烧结 4

1.5.2 低温液相烧结的机制 6

第二章 实验内容 7

2.1 实验原料 7

2.2 实验仪器 7

2.3 实验方法 8

2.4 实验工艺 8

2.5 实验步骤 9

2.6 性能测试 10

2.6.1 物理性能测试 10

2.6.2 微观结构分析 10

2.6.3 介电性能测试 10

第三章 工艺过程对（Zr_0.8，Sn_0.2）TiO₄结构及性能的影响 11

3.1 预烧温度对ZST性能的影响 11

第四章 La₂O₃/MgO对（Zr_0.8，Sn_0.2）TiO₄结构及性能的影响 13

4.1 实验简述 13

4.2 烧结性能 13

4.3 介电性能 14

4.4 物相与显微结构 17

4.5 结论 19

第五章 ZnO/SrO对(Zr_0.8,Sn_0.2)TiO₄介电性能的影响 20

5.1 实验简述 20

5.2 烧结性能 20

5.3 介电性能 21

5.4 结论 22

参考文献 23

感 谢 24

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