论文总字数：21857字

摘 要

随着半导体工艺技术的不断发展，晶体管结构和尺寸越来越接近摩尔定律预测的传统MOS器件的理论极限，短沟道效应所引起的器件性能衰减愈发明显，器件的开关速度、传输速度、稳定性及功耗等都受到了巨大影响。为进一步提高器件性能，减小器件体积，需要寻找新的半导体材料替代传统硅材料。二硫化钼（MoS₂）是一种具有较宽带隙（单层为1.8eV）的超薄原子级厚度二维材料，基于此，本文采用二硫化钼作为沟道材料，同时在具备高介电常数（k≈24）和宽禁带（约5.68eV）的铁电材料二氧化铪（HfO₂）中掺杂Al作为栅极绝缘介质材料，构建负电容场效应晶体管。

利用脉冲激光沉积（PLD）技术，在硅衬底上生长超薄的HfO₂:Al绝缘层和 MoS₂沟道层，利用蒸镀法制作Al电极，构建场效应管。借助拉曼光谱仪、X射线衍射分析仪、四探针电阻率测试仪、分析探针台等多种表征仪器对晶体管进行性能分析，测试转移和输出特性曲线，研究并证明了具有铁电性质的HfO₂:Al材料为绝缘层对降低MoS₂基晶体管功耗的作用。 

关键词：铁电材料 二硫化钼 场效应晶体管 脉冲激光沉积（PLD）

Research on Performance of MoS₂-based Transistors Based on Ultra-thin HfO₂:Al Insulators

Abstract

With the continuous development of semiconductor process technology, transistor structures and dimensions are closer and closer to the theoretical limits of traditional MOS devices predicted by Moore's Law. The device performance degradation caused by the short channel effect becomes more obvious, and the switching speed, transmission speed, stability, and power consumption of the device are greatly affected. In order to further improve the device performance and reduce the device volume, new semiconductor materials need to be found to replace traditional silicon materials. MoS₂ is an ultra-thin, atomic-thickness, two-dimensional material with a wider bandgap (1.8eV single layer). Based on this, MoS₂ is used as a channel material and a ferroelectric material HfO₂ with a high dielectric constant (k≈24) and a wide band gap (about 5.68 eV) is doped with Al as a gate insulating dielectric material to construct a negative capacitance field effect transistor.

Using pulsed laser deposition (PLD) technology, an ultra-thin HfO₂:Al insulating layer and MoS₂ channel layer were grown on a silicon substrate, and an Al electrode was formed by vapor deposition to form a field effect transistor. A variety of characterization instruments, such as Raman spectrometer, X-ray diffraction analyzer, four-probe resistivity tester, and analytical probe station, were used to analyze the performance of the transistor, and the transfer and output characteristics were tested. The effect of the insulating layer on the power consumption of the MoS₂ transistor has been studied and proved.

Key Words: Ferroelectric materials; MoS₂; Field effect transistor; Pulsed Laser Deposition (PLD)

目 录

摘 要 Ⅰ

ABSTRACT Ⅱ

第一章 引言 1

1.1 晶体管 1

1.1.1 传统晶体管及其面临的挑战 1

1.1.2 新型晶体管及其发展趋势 1

1.2 过渡金属硫化物 2

1.2.1 二维材料概况 2

1.2.2 研究进展和趋势 3

1.2.3 MoS₂材料简介 3

1.3 晶体管栅极绝缘层材料 5

1.3.1 铁电材料概况 5

1.3.2 研究进展和趋势 5

1.3.3 HfO₂材料简介 6

1.4 本文研究内容及意义 7

第二章 超薄HfO₂绝缘层的制备及物性研究 8

2.1 激光脉冲沉积技术（PLD） 8

2.2 实验部分 8

2.2.1 实验仪器 8

2.2.2 实验样品 9

2.2.3 实验过程 9

2.3 测试与表征 10

2.3.1 X射线衍射仪（XRD） 10

2.3.2 四探针测电阻率法 10

2.4 结果与分析 11

2.5 本章小结 12

第三章 MoS₂沟道层的制备及物性研究 13

3.1 实验部分 13

3.1.1 实验样品 13

3.1.2 实验过程 13

3.2 拉曼光谱分析 13

3.3 结果与分析 14

3.4 本章小结 15

第四章 MoS₂基晶体管构建及性能分析 16

4.1 MoS₂基晶体管的结构 16

4.2 MoS₂基晶体管的性能分析 17

4.3 本章小结 19

第五章 结论与展望 20

5.1 结论 20

5.2 展望 20

参考文献 22

致谢 25

第一章 引言

1.1 晶体管

1.1.1 传统晶体管及其面临的挑战

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