论文总字数：19309字

摘 要

随着社会现代化的高速发展，各种电子产品成为人们的生活中不可或缺的一部分，如电视、手机、平板、互联网等。所有这些技术的实现，其中都包含了数量庞大的电子元器件、集成电路等，而薄膜是这些器件和电路的基础。其中，Al膜是种常用的薄膜，在光学、电子等领域具有广泛的应用。因而，制备高质量的Al膜，研究其结构与物理性能具有十分重要的意义。溅射镀膜技术是当今工业生产中一种常用的薄膜制备方法，其具有均匀性好、温度低、成本低、适用于制作大面积产品等优点。本文主要研究了等离子等离子溅射气体流量对Al膜结构及电输运特性的影响，并得到了制备Al膜的优化条件。具体包括：

1.利用等离子溅射技术在绝缘衬底上沉积Al薄膜，以氩气为溅射气体，通过调节气体流量、溅射功率，溅射系列Al薄膜。2.利用原子力显微镜、四探针技术等表征手段研究溅射气体流量对Al薄膜表面形貌及电导率的影响。

关键词： 溅射镀膜 Al膜 气体流量

ABSTRACT

With the rapid development of modern society, all kinds of electronic products are becoming indispensable part into people's lives, such as TV, mobile phones, tablet, the Internet and other. All of these techniques contain a large number of electronic components, integrated circuit, which base on the thin-film technology. The Al is commonly used target material and is widely used in industrial production. Therefore, the preparation of high quality Al films and studies about Al film structure and physical property is very important. Otherwise, nowadays the sputtering technology is one of the most widely used thin-film preparation method. This paper experimentally studies the influence of different thin-film preparing parameters on the physical properties of sputtering Al films. A series of exploratory works have been done, including:

1. A series of Al thin-films were deposited on glass substrates by using plasma sputtering technique in argon atmosphere. 2. Gas flow rate and deposition pressure dependent surface topography and electronic transport properties were studied by using atomic force microscopy (AFM) and four probe technique.

Key words: sputtering coating; Al thin film; gas-flow rate;

目 录

第一章 绪论·························································································1

1.1 引言································································································1

1.2溅射镀膜···························································································2

1.2.2 等离子体·····················································································2

1.2.2 溅射现象·····················································································2

1.2.3 溅射镀膜·····················································································3

1.2.3 溅射镀膜的特点············································································5

1.3 Al薄膜的研究背景··············································································5

1.3.1 Al薄膜的性质···············································································5

1.3.2 薄膜的形成与成长·········································································6

1.3.3 薄膜的结构与性能·········································································6

1.4 本课题的研究背景和研究内容·······························································9

第二章 实验设备与测试方法··································································10

2.1 实验设备简介··················································································10

2.2 实验操作步骤··················································································10

2.3 样品测试方法···················································································11

2.3.1 原子力显微镜测试·······································································11

2.3.2 薄膜电阻的测量··········································································12

第三章 Al薄膜等离子溅射的制备及结构性能研究········································14

3.1 溅射气体流量对Al薄膜性质的影响·······················································14

3.1.1 溅射气体流量对Al薄膜沉积速率的影响···········································14

3.1.2 溅射气体流量对Al薄膜表面形貌的影响···········································15

3.1.3 溅射气体流量对Al薄膜电性能的影响··············································16

3.2 溅射功率对Al薄膜性质的影响·····························································17

3.2.1溅射功率对Al薄膜沉积速率的影响··················································17

3.2.2溅射功率对Al薄膜表面形貌的影响··················································18

3.3本章小结··························································································19

总结····································································································20

参考文献······························································································21

致谢····································································································22

请支付后下载全文，论文总字数：19309字