1. 毕业设计（论文）的内容和要求

本课题拟通过金属掺杂、等离子掺杂、表界面处理等技术对PLD制备的MoS2进行处理，以调控MoS2薄膜的电导率、载流子浓度等参数。

使其适用于NCFET的沟道层。

2. 参考文献

1. Mingxu Fang Fang Wang Yemei Han Yulin Feng Tianling Ren Yue Li Dengxuan Tang Zhitang Song Kailiang Zhang, https://doi.org/10.1002/aelm.201700524. 2. Yen-Teng Ho, Chun-Hao Ma, Tien-Tung Luong, Lin-Lung Wei, Tzu-Chun Yen, Wei-Ting Hsu, Wen-Hao Chang, Yung-Ching Chu, Yung-Yi Tu, Krishna Prasad Pande, and Edward Yi Chang, Phys. Status Solidi RRL 9, No. 3, 187#8211;191 (2015) / DOI 10.1002/pssr.201409561. 3. Barvat, Arun， Prakash, Nisha, et. al., DOI： 10.1063/1.4991490. 4. Martha I. Serna Salvador Moreno Marissa Higgins Hyunjoo Choi Majid Minary‐Jolandan Manuel A. Quevedo‐Lopez, https://doi.org/10.1002/pssc.201600091. 5. Dattatray J. Late, Parvez A. Shaikh, Ruchita Khare, Ranjit V. Kashid, Minakshi Chaudhary, Mahendra A. More, and Satishchandra B. Ogale, dx.doi.org/10.1021/am503464h| ACS Appl. Mater. Interfaces 2014, 6, 15881#8722;15888. 6. Yen-Teng Ho ; Tzu-Chun Yen ; Tien-Tung Luong, et. al., DOI: 10.1109/CSTIC.2016.7464088.

3. 毕业设计（论文）进程安排

2018.12-2019.02，文献调研，翻译，开题报告； 2019.03-2019.04，薄膜制备、表征、分析工作； 2019.05-2019.06，论文撰写，答辩。