论文总字数：24643字

摘 要

Abstract II

第一章 绪论 1

1.1 电阻型有机储存器优点 1

1.2 电阻型有机储存器材料与结构 1

1.3 电阻型有机储存器开关效应机理 6

1.4 电阻型有机储存器性能需求 9

第二章 电阻型有机储存器制备 10

2.1 ITO导电玻璃 10

2.1.1 ITO导电玻璃的性质 10

2.1.2 ITO导电玻璃的清洗 11

2.1.3 ITO导电玻璃的刻蚀 11

2.2 HAT-CN有机层 11

2.2.1 旋涂仪简介 11

2.2.2 HAT-CN有机薄膜性质 12

2.2.3 HAT-CN有机薄膜制备 13

2.3 CuPc有机层 14

2.3.1 真空镀膜技术 14

2.3.2 CuPc有机薄膜性质 14

2.3.3 CuPc有机薄膜制备 15

2.4 金属铝电极的制备 15

第三章 电阻值有机储存器性能讨论 16

3.1 储存器件的I-V特性 16

3.1.1器件电流-电压（I-V）特性分类 16

3.1.2 器件I-V特性曲线分析 17

3.2 储存器件电阻开关比的测量 18

第四章 总结 19

致谢 20

参考文献 21

电阻型有机存储器件的器件物理研究

摘要

在如今，信息行业迅猛发展，人们对便携式存储设备的需求量也越来越大。从原来的软盘到U盘，再发展到如今的移动硬盘，这些存储产品已经成为我们生活的必需品。这些产品中最重要的部件就是存储器，它的性能也是人们研究的重点。随着存储产品向着高速化、低功耗、小型化发展，作为主流存储器的Flash已经无法满足要求，因为其尺寸已经接近极限值。若再缩小其尺寸，栅绝缘层的厚度会随着存储器尺寸的缩小而缩小，这会导致隧穿效应逐渐显现，漏电流剧增，器件的可靠性和稳定性会受到很大的影响。由此可见，Flash存储器的各项性能已到达其极限水平，可取代Flash存储器的存储器件的研制亟待进行与完善。目前，非易失性存储器件有望取代闪存，其中有机电阻型存储器结构简单、稳定性好、制备方便、材料丰富并且与传统的CMOS工艺兼容，因而本文致力于研究有机电阻型存储器的制备方法以及对所制备的器件进行性能的测试。

本毕业设计主要了解并且掌握电阻型存储器件的工作原理以及评价存储器件的器件参数，在掌握存储器件结构、基板ITO的设计和刻蚀、旋涂仪和真空蒸镀技术的前提下，进行了有机存储器件的制备，并且对存储器件的性能参数进行了测试，对所制备存储器件的性能进行了评定。本文制备是结构为ITO/HAT-CN（20nm）/CuPc（120nm）/Al的电阻型有机存储器件，对制备的样本进行了测量，测量结果显示，当偏压为2.8V时，开关比接近于7000。并且对器件在开关状态下1000s的工作时间内进行了性能稳定测试，测试结果显示，样本在On和Off状态下的阻值均保持较好的稳定性。测量结果显示，所制备的样本性能优越，能够作为电阻器件使用。

关键词：有机材料，电阻型有机存储器件，开关比，I-V特性

Device physics of organic resistive memory devices

Abstract

With the rapid development of information technology, there is a growing demand for portable storage devices. The storage devices develops from the original soft disk to the U disk, and then to today’s hard disk, which have become the necessities of our life. The most important component of these products is memory elements. and the performance of memory is the focus of research. With the development tendency of storage product to lower power consumption, miniaturization and high speed, the memory of Flash has been unable to meet the requirements, because its size is close to the limit. Thickness of the gate insulating layer needed to be reduced for miniaturization, which causes the gradual emergence of the tunneling effect. Thus, the leakage current will increases and the reliability and stability of device will be greatly affected. Thus the performance of Flash memory has reached its limit level, and the replaced memory is urgently needed and improved. Currently. non-volatile memory is expected to replace the Flash, and resistive memory is of one of non-volatile memory. The resistive memory have both simple structure, low energy consumption, high density, low cost, non-volatile and good compatibility with conventional CMOS processes.

In this paper, the operational principle and the parameters of performance is described, and the technology of eching, spin coating and vacuum coating is introduced. After the design of structure of device and ITO substrate, an organic ReRAM is fabricated and the device’s performance is measured and evaluated. In this paper, a resistive organic memory of ITO/HAT-CN（20nm）/CuPc（120nm）/Al structure is manufactured. The measurement of the sample shows that when bias voltage is 2.8V, the switching ratio reaches to 7000. And the 1000s stability performance of the device is also measured, the test shows the sample in On/Off state maintains good stability. The measurement shows that the manufactured device is superior in performance and can be used as a resistive device.

Keywords: organic materials; organic resistive memory devices; switch ratio; I-V characteristic

第一章 绪论

本章首先介绍了电阻型有机存储器件的优点，其次对电阻型有机存储器件主要材料与结构类型进行了介绍，随后对电阻型存储器的开关效应的机制以及电阻型存储器件的性能需求进行了论述。

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