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毕业论文网 > 毕业论文 > 电子信息类 > 光电信息科学与工程 > 正文

PET基ZnO薄膜材料制备以及性能研究毕业论文

 2022-02-08 20:20:59  

论文总字数:14219字

摘 要

近年来对于电子器件来说,柔韧性被越来越多的学者关注,将高分子材料作为基底的光电器件被越来越多的科学家进行研究。由于高分子材料PET的耐高温性和柔韧性优秀,在柔性器件中作为基底材料被高度认可。

本文主要采用旋涂法制备PET/ZnO薄膜材料,相比PI,PET的耐高温性较低,所以不能采用热喷雾分解法。在旋涂之前,先要制备氧化锌旋涂液,并且取一部分进行旋涂,本文主要研究水热反应的时间的对PET/ZnO薄膜性能的影响。

本文所采用的氧化锌纳米材料均采用水热法制成,为了探究不同反应程度对氧化锌纳米材料性能的影响,实验中通过改变了水热反应温度,反应时间以及碱性条件,成功制备了一批氧化锌材料。

实验采用XRD检测、红外吸收光谱,紫外分光计透射光谱对材料进行表征,研究结果表明:

(1)利用旋涂法在PET上制备了ZnO薄膜时,在当二水合乙酸锌和尿素的配比为1:3和水热温度180℃以及旋涂、退火处理工艺相同的前提下,当水热时间为10h时,制备出的薄膜的结晶性最好,透光性比较高。

(2)使用水热法制备了ZnO纳米颗粒时,在二水合乙酸锌和尿素的配比为1:4和水热温度180℃以及旋涂、退火处理工艺相同的前提下,当水热时间10h时,制备出的ZnO纳米颗粒结晶程度更好,颗粒更小。

关键词:柔性基底 纳米ZnO 光电器件 半导体

Preparation and Properties of ZnO Thin Films on PET

Abstract

In recent years, more and more scholars have paid attention to the flexibility of electronic devices. Optoelectronic devices using polymer materials as a substrate have been studied by more and more scientists. Due to its excellent high temperature resistance and flexibility, PET, a polymer material, is highly recognized as a base material in flexible devices.
This article mainly uses the spin-coating method to prepare the PET/ZnO film material, compared to the PI, the PET has the low temperature resistance, therefore cannot use the hot spray decomposition method. Prior to spin-coating, a zinc oxide spin-on solution was prepared first, and a portion was spin-coated. This article focuses on the effect of the hydrothermal reaction time on the performance of the PET/ZnO film.
The zinc oxide nanomaterials used in this paper were all made by hydrothermal method. In order to explore the influence of different reaction levels on the properties of zinc oxide nanomaterials, a successful preparation was made by changing the hydrothermal reaction temperature, reaction time and basic conditions. Batch of zinc oxide materials.
XRD detection, infrared absorption spectroscopy and ultraviolet spectrometer transmission spectroscopy were used to characterize the material. The results showed that:
(1) When a ZnO thin film is prepared by spin coating on PET, when the ratio of zinc acetate dihydrate and urea is 1:3 and the hydrothermal temperature is 180° C. and the spin coating and annealing process are the same, When the hydrothermal time is 10 h, the prepared film has the best crystallinity and relatively high light transmittance.
(2) When ZnO nano-particles were prepared by hydrothermal method, the ratio of zinc acetate dihydrate and urea was 1:4, the hydrothermal temperature was 180°C, and the spin coating and annealing treatment processes were the same. At 10h, the prepared ZnO nanoparticles have better crystallinity and smaller particles.

Key words: Flexible substrate;nano-ZnO ;Optoelectronic devices;semiconductor

目 录

摘要…………………………………………………………………………………………I

Abstract………………………………………………………………………………II

第一章 绪论………………………………………………………………………………1

1.1 引言…………………………………………………………………………………1

1.2 ZnO的性质和基本结构………………………………………………………………1

1.3 ZnO的制备方法………………………………………………………………………2

1.3.1 化学气相沉积法………………………………………………………………2

1.3.2 水热法…………………………………………………………………………3

1.4 柔性衬底材料的选择…………………………………………………………………3

1.5 制备方法以及导电薄膜性能…………………………………………………………4

1.6 本课题的研究目的与内容……………………………………………………………5

第二章 样品的制备与表征……………………………………………………………7

2.1 实验所需设备及实验步骤…………………………………………………………7

2.1.1 实验设备………………………………………………………………………7

2.1.2 实验原料及试剂………………………………………………………………8

2.1.3 实验步骤………………………………………………………………………8

2.2 样品的测试与表征技术……………………………………………………………9

2.2.1 X射线衍射……………………………………………………………………9

2.2.2 紫外光谱测试…………………………………………………………………9

2.2.3 红外光谱测试…………………………………………………………………10

第三章 实验结果与讨论………………………………………………………………11

3.1 水热法制备纳米ZnO颗粒的表征…………………………………………………11

3.1.1水热法制备的纳米ZnO颗粒的XRD…………………………………………11

3.1.2水热法制备的纳米ZnO颗粒的红外光谱图…………………………………12

3.2旋涂法制备的PET基ZnO薄膜的表征………………………………………………13

3.2.1 旋涂法制备的PET基ZnO薄膜的XRD………………………………………13

3.2.2 旋涂法制备的PET基ZnO薄膜的紫外投射光谱图…………………………14

第四章 总结与展望……………………………………………………………………15

4.1 总结…………………………………………………………………………………15

4.2 不足与展望…………………………………………………………………………15

参考文献…………………………………………………………………………………17

致谢…………………………………………………………………………………………19

第一章 绪论

1.1 引言

近年来,半导体材料的研究逐渐深入,在1996年,关于室温下ZnO光泵紫外激光发射和谐振腔结构[1]被发现。

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