论文总字数：18906字

摘 要

近来技术和科学高速发展,使得大家对电子元器件设备有了更加健康、更加快捷带以及高兼容性等更高的要求,这促使制造其相应的电子元器件变得更便宜、但却具有更高的质量、且能完成大表面积制造。最近，为了实现光电探测的可移植和便捷性，本项目拟采用水热液相合成的技术，生长制备结晶良好的MoO₃纳米线，采用纳米线构造的光电探测器，研究不同光照下，对光的快速响应能力，并分析快速的具体机制，拓展MoO₃纳米线的光电应用范围。

1.采用水热法在200°C下用二（乙酰丙酮）氧化钼、硝酸溶液合成MoO₃纳米线，并改变了硝酸溶液与去离子水的比例用以纳米线生长，生长了较为理想的纳米线。

2.探究了MoO₃纳米带作为可见光范围的光电探测器的潜在应用。该结构表现出高性能的光电导特性：在偏压0/0.5/1V在，改变环境亮度来测试电流，与快速响应暗电流相比，光电流明显增强，选择性，稳定性和再现性高。再探究了改变氙灯的亮度对于纳米线光电流的影响，发现亮度越高条件下，光电流越高，最后进行了遮光试验，发现电流同样具有明显变化，显示了其优异的光电导性能。而优异的光电导性能主要归因于纳米带-纳米带接触区域中的有效势垒高度调制。这些结果表明，MoO₃纳米带可以在光电子领域中找到有价值的应用。

关键词：三氧化钼 光电探测 纳米材料

The preparation of high quality MoO₃ nanowires with photoelectric performance study

Abstract

The recent rapid development of technology and science has led to higher requirements for healthier, faster and more compatible electronic components, which makes it cheaper to manufacture electronic components with higher quality and large surface areas. Recently, in order to realize the portability and convenience of photoelectric detection, researchers began to focus on the design and preparation of high-quality photodetectors. Its unique electron-limiting action is conducive to the separation of electron and hole energy states, thus effectively extending the carrier life and displaying excellent photoelectric characteristics. This project plans to use hydrothermal liquid phase synthesis technology to grow and prepare well-crystallized MoO₃ nanowires, and use photodetector constructed by nanowires to study the rapid response ability to light under different lighting conditions, and analyze the specific mechanism of rapid response, so as to expand the photoelectric application range of MoO₃ nanowires.

1. MoO₃ nanowires were synthesized with molybdenum diacetylacetone oxide and nitric acid solution at 200°C by hydrothermal method, and the ratio between nitric acid solution and deionized water was changed to grow nanowires, resulting in relatively ideal nanowires.

2. Explored the potential application of MoO₃ nanoribbons as photodetectors in the range of visible light. The structure exhibits high performance photoconductivity characteristics: at bias voltage of 0/0.5/1v, the ambient brightness is changed to test the current, and the photocurrent is significantly enhanced, selective, stable and reproducible compared with the fast response dark current. Then the influence of changing the brightness of xenon lamp on the photocurrent of nanowires was explored. It was found that the higher the brightness was, the higher the photocurrent would be. Finally, the shading test was conducted, and it was found that the current also had obvious changes, showing its excellent photoconductivity. The excellent photoconductivity is mainly attributed to the effective barrier height modulation in the contact region of nanoribbons.

Key words: molybdenum trioxide; photoelectric detection; nanometer material

目录

摘 要 I

Abstract II

第一章 绪论 1

1.1研究背景及意义 1

1.2纳米材料 2

1.2.1 纳米材料的定义与背景 2

1.2.2 纳米材料的分类 2

1.2.3 纳米材料的基本效应 3

1.2.4 纳米材料的光学性质 3

1.2.5 纳米材料的磁学性质 3

1.2.6纳米材料的力学性质 3

1.2.7纳米材料的电学性质 4

1.2.8纳米材料热学性质 4

1.2.9纳米材料化学性质 4

1.2.10纳米材料的应用 5

1.3 一维纳米材料 5

1.4 MoO₃纳米材料 6

1.4.1三氧化钼晶体结构 6

1.4.2 MoO₃材料性能 6

1.4.3 MoO₃材料的制备 7

1.4.4 三氧化钼材料的应用 8

1.5 一维纳米材料的制备 8

1.6光电探测器 9

1.7 本论文研究内容 9

第二章 实验部分 11

2.1 实验药品及仪器 11

2.2 材料表征及测试方法 12

2.2.1傅里叶变换红外光谱法 12

2.2.2 X射线衍射分析 13

2.2.3 数码金相显微镜 14

2.3光电性能评价 15

第三章 水热法制备三氧化钼纳米线及其光电性能探究 16

3.1引言 16

3.2 三氧化钼纳米线的制备方法以及过程 16

3.3 表征方法 18

3.3.1傅里叶变换红外光谱测试 19

3.3.2 X射线衍射分析 19

3.3 光学显微镜拍照 19

3.4 MoO₃的光电性能测试 23

第四章 结果与讨论 22

4.1 表征结果及分析 22

4.1.1 傅里叶变换红外光谱测试 22

4.1.2 X射线衍射分析 22

4.1.3 数码金相显微镜图像分析 23

4.2 光电性能测试及分析 24

4.1.1 明暗环境对比实验 24

4.1.2 光源亮度对比实验 24

4.2.3 遮透光实验 25

4.2.4 激光实验 26

4.3 三氧化钼导电原因分析 27

第五章 结论 28

参考文献 29

致谢 32

第一章 绪论

1.1研究背景及意义

请支付后下载全文，论文总字数：18906字